This research project focuses on advancing the understanding of radiation effects testing using pulsed laser technology in modern CMOS (complementary metal-oxide-semiconductor) technology nodes. Single-photon and two-photon absorption laser testing methods are widely used for evaluating Single-Event Effects (SEE) in electronic circuits. However, as CMOS technology progresses to smaller geometries, traditional laser testing encounters limitations. Reduced feature sizes change the interaction between laser energy and circuit materials, causing discrepancies between laser test results and real irradiation responses.
The scope of this project is to identify which circuit topologies affect laser testability and develop strategies to address issues related to shrinking geometries. The ultimate goal is to create a roadmap for pulsed laser testing tailored to deep submicron CMOS nodes, ensuring robust testing methodologies for future semiconductor technologies.
As a Postdoctoral Researcher, you will:
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Conduct experimental and theoretical research on radiation-induced Single-Event Effects (SEE) in advanced CMOS nodes;
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Analyze the challenges of single-photon and two-photon laser testing in submicron geometries;
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Investigate circuit topologies that influence laser testability and propose solutions to overcome limitations;
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Develop and validate methodologies for pulsed laser testing in modern CMOS technologies;
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Collaborate with interdisciplinary teams, contribute to the preparation of high-impact publications, and present findings at international conferences.
